Semiconductor circular ring lasers fabricated with the cryo-etching technique

IEEE Photonics Technology Letters

Volumn 10, Issue 6, 1998, Pages 751-753

  Tsai, Chia Ho ^a   Lee, Jiun Haw ^a   Chiang, Hsin Jiun ^a   Yang, C C ^a   Shih, M C ^b   Chen, B C ^a   Chuang, T J ^c   Chang, Yih ^d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^d NATIONAL DEFENSE UNIVERSITY   (Taiwan)

Author keywords

Etching; Ring lasers; Semiconductor lasers

Indexed keywords

ETCHING; QUANTUM EFFICIENCY; RING LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SPECTRUM ANALYSIS;

COUPLED CAVITY MODELS; CRYO-ETCHING TECHNIQUES;

QUANTUM WELL LASERS;

EID: 0032099550     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.681468     Document Type: Article

References (10)

1. J. P. Hohimer, G. A. Vawter, D. C. Craft, and G. R. Hadley, "Improving the performance of semiconductor ring laser by controlled reflection feedback," Appl. Phys. Lett., vol. 61, pp. 1013-1015, 1992.
2. J. P. Hohimer and G. A. Vawter, "Passive mode-locking of monolithic semicondutor ring lasers at 86 GHz," Appl. Phys. Lett., vol. 63, pp. 1598-1600, 1993.
3. M. C. Shih, M. H. Hu, M. B. Freiler, M. Levy, R. Scarmozzino, R. M. Osgood, Jr., I. W. Tao, and W. I. Wang, "Fabrication of an InGaAs single quantum well circular ring laser by direct laser patterning," Appl. Phys. Lett., vol. 66, pp. 2608-2610, 1995.
4. A. Behfar-Rad, J. M. Ballantyne, and S. S. Wong, "AlGaAs/GaAs-based triangular-shaped ring ridge lasers," Appl. Phys. Lett., vol. 60, pp. 1658-1660, 1992.
5. J. J. Liang, S. T. Lau, M. H. Leary, and J. M. Ballantyne, "Unidirectional operation of waveguide diode ring lasers," Appl. Phys. Lett., vol. 70, pp. 1192-1194, 1997.
6. H. Han, D. V. Forbes, and J. J. Coleman, "InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers," IEEE J. Quantum Electron., vol. 31, pp. 1994-1997, 1995.
7. T. F. Krauss, R. M. De La Rue, and P. J. R. Laybourn, "Impact of output coupler configuration on operating characteristics of semiconductor ring lasers," J. Lightwave Technol., vol. 13, pp. 1500-1507, 1995.
8. M. C. Shih, M. B. Freier, G. Haase, R. Scarmozzino, and R. M. Osgood, Jr., "Condensed chlorine etching of GaAs induced by excimer laser radiation," Appl. Phys. Lett., vol. 61, pp. 828-830, 1992.
9. M. C. Shih, M. B. Freier, R. Scarmozzino, and R. M. Osgood, Jr., "Patterned, photon-driven cryoetching of GaAs and AlGaAs," J. Vac. Sci. Technol., vol. B13, pp. 43-54, 1995.
10. C. Thirstrup, S. W. Pang, O. Albrektsen, and J. Hanberg, "Effects of reactive ion etching on optical and electro-optical properties of GaInAs/InP based strip-loaded waveguides," J. Vac. Sci. Technol., vol. B11, pp. 1214-1221, 1993.