Photovoltaic and transport properties of the heterojunction between poly (4,4′-dipentoxy-2,2′bithiophene) and n-doped silicon

Solar Energy Materials and Solar Cells

Volumn 53, Issue 3-4, 1998, Pages 217-227

  Camaioni, N ^a   Beggiato, G ^a   Casalbore Miceli, G ^a   Geri, A ^a   Martelli, A ^a   Ventura, L ^a  

^a Istituto di Fotochimica e Radiazioni d'Alta Energia   (Italy)

Author keywords

Heterojunction; Photovoltaics; Schottky barrier; Transport

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC IMPEDANCE; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; PHOTOVOLTAIC EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SHORT CIRCUIT CURRENTS; SPECTROSCOPIC ANALYSIS; SULFUR COMPOUNDS;

IMPEDANCE SPECTROSCOPY; MOTT SCHOTTKY PLOT; OPEN CIRCUIT VOLTAGE; POLYDIPENTOXYBITHIOPHENE;

HETEROJUNCTIONS;

EID: 0032097915     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(98)00004-X     Document Type: Article

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