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Volumn 120, Issue 2, 1998, Pages 296-302

Study on the deposition profile characteristics in the micron- scale trench using direct simulation monte carlo method

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; MONTE CARLO METHODS; SPUTTER DEPOSITION;

EID: 0032097775     PISSN: 00982202     EISSN: 1528901X     Source Type: Journal    
DOI: 10.1115/1.2820648     Document Type: Article
Times cited : (6)

References (11)
  • 1
    • 85025238463 scopus 로고
    • Molecular Gas Dynamics, Clarendon Press
    • Bird, G. A., 1976, Molecular Gas Dynamics, Clarendon Press.
    • (1976)
    • Bird, G.A.1
  • 2
    • 0343842344 scopus 로고
    • Simulation of Multi-Dimensional and Chemical Reacting Flows
    • CEA, 11th, Paris
    • Bird, G. A., 1979, “Simulation of Multi-Dimensional and Chemical Reacting Flows,” Rarefied Gas Dynamics, CEA, 11th, Paris, Vol. 1, p. 365.
    • (1979) Rarefied Gas Dynamics , vol.1 , pp. 365
    • Bird, G.A.1
  • 3
    • 0038466048 scopus 로고
    • Penalization by Radio-frequency Bias Sputtering of Aluminum as Studied Experimentally and by Computer Simulation
    • Bader, H. P., and Lardon, M. A., 1985, “Penalization by Radio-frequency Bias Sputtering of Aluminum as Studied Experimentally and by Computer Simulation,” Journal of the Vacuum Science and Technology, Vol. A3, pp. 2167-2171.
    • (1985) Journal of the Vacuum Science and Technology , vol.A3 , pp. 2167-2171
    • Bader, H.P.1    Lardon, M.A.2
  • 5
    • 0022076866 scopus 로고
    • Planar Deposition of Aluminum by RF/DC Sputtering with RF Bias
    • Homma, Y., and Tsunekawa, S., 1985, “Planar Deposition of Aluminum by RF/DC Sputtering with RF Bias,” Journal of the Electrochemical Society, Vol. 132, No. 6, pp. 1466-1472.
    • (1985) Journal of the Electrochemical Society , vol.132 , Issue.6 , pp. 1466-1472
    • Homma, Y.1    Tsunekawa, S.2
  • 6
    • 0024755516 scopus 로고
    • Deposition Profile Simulation Using Direct Simulation Monte Carlo Method
    • Ikegawa, M and Kobayashi, J., 1989, “Deposition Profile Simulation Using Direct Simulation Monte Carlo Method,” Journal of the Electrochemical Society, Vol. 136, No. 10, pp. 2983-2986.
    • (1989) Journal of the Electrochemical Society , vol.136 , Issue.10 , pp. 2983-2986
    • Ikegawa, M.1    Kobayashi, J.2
  • 7
    • 0025465701 scopus 로고
    • Development of a Rarefied Gas Flow Simulator Using the Direct-Simulation Monte Carlo Method (2-D Flow Analysis with the Pressure Conditions Given at the Upstream and Downstream Boundaries)
    • Ikegawa, M., and Kobayashi, J., 1990, “Development of a Rarefied Gas Flow Simulator Using the Direct-Simulation Monte Carlo Method (2-D Flow Analysis with the Pressure Conditions Given at the Upstream and Downstream Boundaries),” JSME International Journal, Series 2, Vol. 33, No. 3, pp. 463-467.
    • (1990) JSME International Journal, Series 2 , vol.33 , Issue.3 , pp. 463-467
    • Ikegawa, M.1    Kobayashi, J.2
  • 8
    • 0019048873 scopus 로고
    • Application of Line-Edge Profile Simulation to Thin Film Deposition Processes
    • ED-27-8
    • Neureuther, A. R., Ting, C. H., and Liu, C. Y., 1980, “Application of Line-Edge Profile Simulation to Thin Film Deposition Processes,” IEEE Transactions of Electron Devices, Vol. ED-27-8, pp. 1449-1455.
    • (1980) IEEE Transactions of Electron Devices , pp. 1449-1455
    • Neureuther, A.R.1    Ting, C.H.2    Liu, C.Y.3
  • 10
    • 0042739096 scopus 로고
    • Significant Improvement in Step Coverage Using Bias Sputtered Aluminum
    • Skelly, D. W., and Gruenke, L. A., 1986, “Significant Improvement in Step Coverage Using Bias Sputtered Aluminum,” Journal of the Vacuum Science and Technology, Vol. A4(3), pp. 457-462.
    • (1986) Journal of the Vacuum Science and Technology , vol.A4 , Issue.3 , pp. 457-462
    • Skelly, D.W.1    Gruenke, L.A.2
  • 11
    • 0025419656 scopus 로고
    • Micro/Macrocavity Method Applied to the Study of the Step Coverage Formation Mechanism of Si02 Films by LPCVD
    • Watanabe, K., and Komiyama, H., 1990, “Micro/Macrocavity Method Applied to the Study of the Step Coverage Formation Mechanism of Si02 Films by LPCVD,” Journal of the Electrochemical Society, Vol. 137, No. 4, pp. 1222-1227.
    • (1990) Journal of the Electrochemical Society , vol.137 , Issue.4 , pp. 1222-1227
    • Watanabe, K.1    Komiyama, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.