Spin-polarized tunneling by spin-polarized scanning tunneling microscopy

Journal of Applied Physics

Volumn 83, Issue 11, 1998, Pages 6831-6833

  Kodama, Hiroyoshi ^a   Uzumaki, Takuya ^a   Oshiki, Mitsumasa ^a   Sueoka, Kazuhisa ^b   Mukasa, Koichi ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GOLD; MAGNETIC FILMS; MAGNETIC VARIABLES MEASUREMENT; MAGNETIZATION; NICKEL COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR LASERS; SURFACE TREATMENT;

SPIN POLARIZED TUNNELING; SURFACE RECONSTRUCTION;

SCANNING TUNNELING MICROSCOPY;

EID: 0032097376     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367816     Document Type: Article

References (7)

1. M. Johnson and J. Clarke, J. Appl. Phys. 67, 6141 (1990).
2. S. F. Alvarado and P. Renaud, Phys. Rev. Lett. 68, 1387 (1992).
3. K. Sueoka, K. Mukasa, and K. Hayakawa, Jpn. J. Appl. Phys., Part 1 32, 2989 (1993).
4. R. Wiesendanger, H.-J. Güntherodt, G. Güntherodt, R. J. Gambino, and R. Ruf, Phys. Rev. Lett. 65, 247 (1990).
5. D. T. Pierce and F. Meier, Phys. Rev. B 13, 5484 (1976).
6. M. W. J. Prins, R. Jansen, and H. van Kempen, Phys. Rev. B 53, 8105 (1996).
7. D. Paraskevopoulos, R. Meservey, and P. M. Tedrow, Phys. Rev. B 16, 4907 (1977).