The current status of plasma assisted MBE growth of group III-nitrides

Journal of Materials Science: Materials in Electronics

Volumn 9, Issue 3, 1998, Pages 227-230

  Foxon, C T ^a   Hughes, O H ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH KINETICS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; SUBSTRATES; NITRIDES; PLASMA APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

GROWTH MORPHOLOGY; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; ALUMINUM NITRIDES; GALLIUM NITRIDES; INDIUM NITRIDES;

NITRIDES; SEMICONDUCTOR GROWTH;

EID: 0032096013     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008834426133     Document Type: Article

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