-
1
-
-
0026926869
-
100-V highperformance amplifiers in BCD technology for SLIC applications
-
R. Castello, F. Lari, M. Siligoni, and L. Tomasini, "100-V highperformance amplifiers in BCD technology for SLIC applications," IEEE J. Solid-State Circuits, vol. 27, pp. 1255-1263, 1992.
-
(1992)
IEEE J. Solid-State Circuits
, vol.27
, pp. 1255-1263
-
-
Castello, R.1
Lari, F.2
Siligoni, M.3
Tomasini, L.4
-
2
-
-
0025505892
-
SLIC chip set adapts to different line lengths
-
Oct.
-
A. Pariani and W. Rossi, "SLIC chip set adapts to different line lengths," Electron. Eng., pp. 59-62, Oct. 1990.
-
(1990)
Electron. Eng.
, pp. 59-62
-
-
Pariani, A.1
Rossi, W.2
-
3
-
-
0025415888
-
A no-trimming SLIC two-chip set with coin telephone signaling facilities
-
M. Akata, Y. Nagataki, K. Koyabu, K. Mukai, S. Yoshida, S. Morisaki, M. Eda, I. Ueki, and T. Matsui, "A no-trimming SLIC two-chip set with coin telephone signaling facilities," IEEE J. Solid-State Circuits, vol. 25, pp. 458-465, 1990.
-
(1990)
IEEE J. Solid-State Circuits
, vol.25
, pp. 458-465
-
-
Akata, M.1
Nagataki, Y.2
Koyabu, K.3
Mukai, K.4
Yoshida, S.5
Morisaki, S.6
Eda, M.7
Ueki, I.8
Matsui, T.9
-
4
-
-
0029190920
-
Integration of a subscriber line interface circuit (SLIC) in a new 170V smart power technology
-
B. Zojer, R. Koban, R. Petschacher, and W. Screinig, "Integration of a subscriber line interface circuit (SLIC) in a new 170V smart power technology," in ISPSD Proc., 1995, pp. 293-297.
-
(1995)
ISPSD Proc.
, pp. 293-297
-
-
Zojer, B.1
Koban, R.2
Petschacher, R.3
Screinig, W.4
-
5
-
-
2342476468
-
SLIC ejects relays from PABX line cards
-
July
-
A. Goodenough, "SLIC ejects relays from PABX line cards," Electron. Design, pp. 55-64, July 1994.
-
(1994)
Electron. Design
, pp. 55-64
-
-
Goodenough, A.1
-
6
-
-
84907752647
-
A sub-micron BiCMOS technology for telecommunications
-
R. Hadaway, P. Kempf, P. Schvan, M. Rowlandson, V. Ho, J. Kolk, B. Tait, D. Sutherland, G. Jolly, and I. Emesh, "A sub-micron BiCMOS technology for telecommunications," in ESSDRC Proc., 1991, pp. 513-516.
-
(1991)
ESSDRC Proc.
, pp. 513-516
-
-
Hadaway, R.1
Kempf, P.2
Schvan, P.3
Rowlandson, M.4
Ho, V.5
Kolk, J.6
Tait, B.7
Sutherland, D.8
Jolly, G.9
Emesh, I.10
-
7
-
-
0028720731
-
Submicron BiCMOS compatible high-voltage MOS transistors
-
Y. Q. Li, C. A. T. Salama, M. Seufert, P. Schvan, and M. King, "Submicron BiCMOS compatible high-voltage MOS transistors." in ISPSD Proc., 1994, pp. 355-359.
-
(1994)
ISPSD Proc.
, pp. 355-359
-
-
Li, Y.Q.1
Salama, C.A.T.2
Seufert, M.3
Schvan, P.4
King, M.5
-
8
-
-
0029700083
-
A fully resurfed, BiCMOS-compatible high-voltage MOS transistor
-
M. Liu, C. A. T. Salama, P. Schvan, and M. King, "A fully resurfed, BiCMOS-compatible high-voltage MOS transistor," in ISPSD Proc., 1996, pp. 143-146.
-
(1996)
ISPSD Proc.
, pp. 143-146
-
-
Liu, M.1
Salama, C.A.T.2
Schvan, P.3
King, M.4
-
9
-
-
0020766221
-
A simplified model of short channel MOSFET characteristics in the breakdown mode
-
F. C. Hsu, R. S. Muller, and C. Hu. "A simplified model of short channel MOSFET characteristics in the breakdown mode," IEEE Trans. Electron Devices, vol. ED-30, pp. 571-576, 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 571-576
-
-
Hsu, F.C.1
Muller, R.S.2
Hu, C.3
-
12
-
-
0027855295
-
Class-AB large-swing CMOS buffer amplifier with controlled bias current
-
J. Kih, B. Chang, and D. Jeong, "Class-AB large-swing CMOS buffer amplifier with controlled bias current," IEEE J. Solid-State Circuits, vol. 28, pp. 1350-1353, 1993.
-
(1993)
IEEE J. Solid-State Circuits
, vol.28
, pp. 1350-1353
-
-
Kih, J.1
Chang, B.2
Jeong, D.3
-
13
-
-
84889220917
-
A class AB floating buffer BiCMOS power op-amp
-
C. A. Lish, "A class AB floating buffer BiCMOS power op-amp," IEEE J. Solid-State Circuits, vol. 30, pp. 670-675, 1995.
-
(1995)
IEEE J. Solid-State Circuits
, vol.30
, pp. 670-675
-
-
Lish, C.A.1
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