Control of step structures of Si(001) by highly doped As

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 771-775

  Shimizu, Tetsuo ^a   Ando, Atsushi ^a   Tokumoto, Hiroshi ^a  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SURFACE STRUCTURE;

STEP STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 0032094719     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00152-4     Document Type: Article

References (6)

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4. D.E. Jones J.P. Pelz Y. Hong E. Bauer I.S.T. Tsong Phys. Rev. Lett. 77 1996 330
5. T. Komeda Y. Nishioka Appl. Surf. Sci. 117–118 1997 20
6. T. Shimizu, A. Ohi, H. Tokumoto, in preparation.