On the interface strain distribution in Si-on-sapphire system

Physica B: Condensed Matter

Volumn 248, Issue 1-4, 1998, Pages 79-82

  Gartstein, E ^a   Lach, S ^a   Mogilyanski, D ^a   Metzger, H ^b   Peisl, J ^b  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b UNIVERSITY OF MUNICH   (Germany)

Author keywords

Sapphire; Silicon; X ray strain determination

Indexed keywords

COMPUTATIONAL METHODS; MATHEMATICAL MODELS; SAPPHIRE; SEMICONDUCTING SILICON; STRAIN MEASUREMENT; STRESS CONCENTRATION; X RAY ANALYSIS;

BIAXIAL STRAIN MODEL;

HETEROJUNCTIONS;

EID: 0032093944     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00207-5     Document Type: Article

References (5)

1. E. Gartstein, D. Mogilyansky, H. Metzger, J. Peisl, Surface Investigation 12 (1997) 493.
2. E.L. Gartstein, in: A. Rosen, D.G. Brandon, R. Chaim (Eds.), Proc. 9th Int. Conf. on the Strength of Metals and Alloys, Haifa, Israel, Freund, 1991, p. 1127.
3. E. Gartstein, S. Lach, D. Mogilyansky, H. Metzger, J. Peisl, in press.
4. J.F. Nye, Properties of Crystals, Oxford Univ. Press, Oxford, 1985.
5. T.H. Metzger, H. Rhan et al., to be published.