Magneto-photoluminescence in high magnetic fields from InGaAs/GaAs quantum dots formed in tetrahedral-shaped recesses

Physica B: Condensed Matter

Volumn 249-251, Issue , 1998, Pages 247-251

  Uchida, K ^a   Miura, N ^a   Sakuma, Y ^b   Awano, Y ^b   Futatsugi, T ^b   Yokoyama, N ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

InGaAs GaAs; Magneto photoluminescence; Quantum dots; Tetrahedral shaped recess

Indexed keywords

MAGNETIC FIELD EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

DIAMAGNETIC SHIFT; MAGNETOPHOTOLUMINESCENCE; TETRAHEDRAL SHAPED RECESS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032093582     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00108-2     Document Type: Article

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