Erbium doping in silicon by thermal indiffusion

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 SUPPL. B, 1998, Pages 3669-3672

  Wong, Emile Man Wah ^a   Liu, Hongwei ^a   Man, Shi Qing ^a   Pun, Edwin Yue Bun ^a   Chung, Po Sheun ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Erbium; Photoluminescence; Rare earth ion; Silicon; Thermal indiffusion

Indexed keywords

ERBIUM; GERMANIUM; OXIDES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; THERMAL DIFFUSION;

THERMAL INDIFFUSION; YTTERBIUM OXIDE;

SEMICONDUCTOR DOPING;

EID: 0032093407     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3669     Document Type: Article

References (10)

1. J. Schmidtchen, B. Schüppert and K. Petermann: J. Lightwave Technol. 12 (1994) 842.
2. H. Ennen, J. Schneider, G. Pomrenke and A. Axmann: Appl. Phys. Lett. 43 (1983) 943.
3. H. Ennen, G. Pomrenke, A. Axmann, K. Eisele, W. Haydl and J. Schneider: Appl. Phys. Lett. 46 (1985) 381.
4. V. Petrov, V. S. Prosolovich, V. D. Tkachev, G. Tsyrulkevich and Yu. A. Karpov: Sov. Phys. Semicond. 19 (1985) 474.
5. H. Nakagome, K. Uwai and K. Takahei: Appl. Phys. Lett. 53 (1988) 1726.
6. A. Polman, G. N. van den Hoven, J. S. Custer, J. H. Shin, R. Serna and P. F. A. Alkemade: J. Appl. Phys. 77 (1995) 1256.
7. T. Oestereich, C. Swiatkowski and I. Broser: Appl. Phys. Lett. 56 (1990) 446.
8. J. Michel, L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald. Y. H. Xie, J. M. Poate and L. C. Kimerling: J. Appl. Phys. 70 (1991) 2672.
9. G. S. Pomrenke, P. B. Klein and D. W. Langer: Proc. Materials Research Society Symp. Rare Earth Doped Semiconductors, San Francisco, 1993 (Material Research Society, Pittsburgh, Pennsylvania, 1993) p. 87.
10. J. L. Benton, J. Michel, L. C. Kimerling, D. C. Jacobson, Y. H. Xie, D. J. Eaglesham, E. A. Fitzgerald and J. M. Poate: J. Appl. Phys. 70 (1991) 2667.