Hydrogen segregation at the Al/Si(1 1 1) interface

Physica B: Condensed Matter

Volumn 248, Issue 1-4, 1998, Pages 90-94

  Felcher, G P ^a   Dozier, W ^a   Marwick, A D ^b  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b IBM RESEARCH   (United States)

Author keywords

Depth profile; Hydrogen in metals; Neutron reflection

Indexed keywords

ALUMINUM; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; HYDROGEN; ION IMPLANTATION; NEUTRON REFLECTION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SUBSTRATES;

DENSITY DEPTH PROFILING;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0032093362     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00209-9     Document Type: Article

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