Energy level splitting in doped nonabrupt GaAs/AlxGa1-xAs double quantum well

Solid State Communications

Volumn 106, Issue 9, 1998, Pages 559-562

  Freire, J A K ^a   Farias, G A ^a   Freire, V N ^a  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE QUANTUM WELL; ENERGY LEVEL SPLITTING;

ELECTRON ENERGY LEVELS;

EID: 0032091327     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00151-3     Document Type: Article

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