Electrical properties of n-GaN/n+-GaAs interfaces

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 773-777

  Kribes, Y ^a   Harrison, I ^a   Tuck, B ^a   Cheng, T S ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); METAL INSULATOR BOUNDARIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SUBSTRATES;

CAPACITANCE VOLTAGE CHARACTERISTICS;

HETEROJUNCTIONS;

EID: 0032090696     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00289-9     Document Type: Article

References (5)

1. S.N. Novikov, C.T. Foxon, T.S. Cheng, T.L. Tansley, J.W. Orton, D.E. Lacklison, D. Johnston, N. Baba-Ali, S.E. Hooper, L.C. Jenkins, L. Eaves, J. Crystal Growth 146 (1995) 340.
2. R.L. Anderson, Solid State Electron. 5 (1962) 341.
3. W.G. Oldham, A.G. Milnes, Solid State Electron. 7 (1964) 153.
4. C.V. Opdorp, H.K.J. Kanerva, Solid State Electron. 10 (1967) 401.
5. T.S. Cheng, C.T. Foxon, N.J. Jeffs, O.H. Hughes, B.G. Ren, Y. Xin, P.D. Brown, J. Humphreys, A.V. Andranov, D.E. Lacklison, J.W. Orton, MRS Int. J. Nitride Semicond. Res. 32 (1997) 1.