메뉴 건너뛰기




Volumn 107, Issue 6, 1998, Pages 267-271

Influence of capping on manganese diffusion in CdTe/CdMnTe quantum well structures

Author keywords

A. Quantum wells; A. surfaces and interfaces; B. epitaxy; D. exchange and superexchange; D. optical properties

Indexed keywords

ANNEALING; EVAPORATION; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

EID: 0032090116     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00233-6     Document Type: Article
Times cited : (5)

References (15)
  • 8
    • 0043003726 scopus 로고    scopus 로고
    • Edited by T.S. Moss and S. Mahajan, Elsevier Science B.V., Amsterdam
    • Dietl, T., Handbook of Semiconductors (Edited by T.S. Moss and S. Mahajan), p. 1521. Elsevier Science B.V., Amsterdam, 1997.
    • (1997) Handbook of Semiconductors , pp. 1521
    • Dietl, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.