Single contact electron beam induced currents (scebic) in semiconductor junctions. Part I: Quantitative verification of scebic model

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 957-962

  Kolachina, S ^a   Phang, J C H ^a   Chan, D S H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTROSTATICS; SEMICONDUCTOR DEVICE MODELS; TRANSIENTS;

SINGLE CONTACT ELECTRON BEAM INDUCED CURRENTS (SCEBIC);

SEMICONDUCTOR JUNCTIONS;

EID: 0032089837     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00109-9     Document Type: Article

References (4)

1. Leamy, H. J., J. Appl. Phys., 1982, 53, R51.
2. Ong, V. K. S., Chan, D. S. H., Phang, J. C. H., 4th International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore, eds. Y. K. Swee, S. H. Ong and D. S. H. Chan. IEEE, Singapore, 45, 1993.
3. Ong, V. K. S., Phang, J. C. H., Chan, D. S. H., Proceedings of the 20th International Symposium for Testing and Failure Analysis, Los Angeles. ASM International, Materials Park, OH, 49, 1994.
4. Ong, V. K. S., An investigation into the electron beam induced current effects on semiconductor materials and devices. Ph.D. Thesis, National University of Singapore, Singapore, 1995.