Enhancement of sensitivity and conductivity of semiconducting Ga2O3 gas sensors by doping with SnO2

Sensors and Actuators, B: Chemical

Volumn 49, Issue 1-2, 1998, Pages 110-114

  Frank, Joachim ^a   Fleischer, Maximilian ^a   Meixner, Hans ^a   Feltz, Adalbert ^b  

^a SIEMENS AG   (Germany)

^b SIEMENS AG ÖSTERREICH   (Austria)

Author keywords

Doping; Gallium oxide; Gas sensors; Metal oxides; Thin film

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; OXIDES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SPUTTER DEPOSITION; THIN FILMS;

GALLIUM OXIDE; METAL OXIDES; SEMICONDUCTING GAS SENSOR;

ELECTROCHEMICAL SENSORS;

EID: 0032089656     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(98)00094-X     Document Type: Article

References (4)

1. 3 thin films, Sensors and Actuators B 6 (1992) 257-261.
2. 3 films, Sensors and Actuators B 34 (1996) 373-377.
3. M. Fleischer, H. Meixner, Gallium Oxide Thin Films: A New Material for High-temperature Oxygen Sensors, Sensors and Actuators B 4 (1991) 437-441.
4. 3, J. Appl. Phys. 74/1 (1993) 300.