Phonon emission by hot 2D electrons and holes in a Gallium Arsenide heterojunction: The influence of screening and acoustic anisotropy

Physica B: Condensed Matter

Volumn 249-251, Issue , 1998, Pages 718-722

  Lehmann, D ^a   Jasiukiewicz, Cz ^b   Kent, A J ^c  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF WROC AW   (Poland)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Hot carriers; Screening; Two dimensional electron gas; Two dimensional hole systems

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; HETEROJUNCTIONS; HOT CARRIERS; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON PHONON COUPLING; TWO DIMENSIONAL ELECTRON GAS; TWO DIMENSIONAL HOLE SYSTEMS;

ELECTRON EMISSION;

EID: 0032089635     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(98)00299-3     Document Type: Article

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