Technology development of 3-D GaAs radiation detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 410, Issue 1, 1998, Pages 115-123

  Meikle, A R ^b   Ledingham, K ^b   Marsh, J H ^b   More, B ^a   O'Shea, V ^b   Raine, C ^b   Smith, K M ^b  

^a SELLAFIELD LTD   (United Kingdom)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; NEODYMIUM LASERS; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

SEMICONDUCTOR DETECTORS;

RADIATION DETECTORS;

EID: 0032089527     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00191-0     Document Type: Article

References (4)

1. R.L. Bates et al., Radiation induced damage in GaAs particle detectors, IEEE Trans. Nucl. Sci. 44 (1997).
2. S. Parker, C. Kenney, J. Segal, 3-D - A new architecture for solid-state radiation detectors, University of Hawaii Internal Report, UH 511-839-96 (1996).
3. T.R. Anthony, J. Appl. Phys. 53 (1982) 9154.
4. S. Riley, L. Schick, Proc. SPIE 1598 (1991) 118.