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Volumn 106, Issue 11, 1998, Pages 751-753
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Uniaxial-stress-induced alignment of the B804 (J-lines) centres in silicon
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Author keywords
A. semiconductors; C. point defects; D. electronic states (localized); D. radiation effects; E. luminescence
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Indexed keywords
CRYSTAL ATOMIC STRUCTURE;
ELECTRONIC DENSITY OF STATES;
PHOTOLUMINESCENCE;
POINT DEFECTS;
RADIATION EFFECTS;
SPECTROSCOPY;
STRESSES;
DEFECT FORMATION;
UNIAXIAL STRESS;
SEMICONDUCTING SILICON;
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EID: 0032089476
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1098(98)00096-9 Document Type: Article |
Times cited : (13)
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References (9)
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