메뉴 건너뛰기




Volumn 106, Issue 11, 1998, Pages 751-753

Uniaxial-stress-induced alignment of the B804 (J-lines) centres in silicon

Author keywords

A. semiconductors; C. point defects; D. electronic states (localized); D. radiation effects; E. luminescence

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC DENSITY OF STATES; PHOTOLUMINESCENCE; POINT DEFECTS; RADIATION EFFECTS; SPECTROSCOPY; STRESSES;

EID: 0032089476     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00096-9     Document Type: Article
Times cited : (13)

References (9)
  • 1
    • 85033931220 scopus 로고    scopus 로고
    • note
    • 4 represents the isoelectronic centre with the exciton binding energy 48.0 meV. The corresponding major PL spectral lines are denoted by the letter X. In parenthesis notations from [3] are given.
  • 7
    • 0041560946 scopus 로고
    • Nauka, Moscow
    • Bir, G.L. and Pikus, G.E., Symmetry and Strain-Induced Effects in Semiconductors, p. 247. Halsted, New York, 1974 (Simmetria i Deformatsionnye Effecty v Poluprovodnikakh, p. 394. Nauka, Moscow, 1972.
    • (1972) Simmetria I Deformatsionnye Effecty V Poluprovodnikakh , pp. 394


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.