Uniaxial-stress-induced alignment of the B804 (J-lines) centres in silicon

Solid State Communications

Volumn 106, Issue 11, 1998, Pages 751-753

  Kaminskii, A S ^a   Lavrov, E V ^a  

^a MIREA RUSSIAN TECHNOLOGICAL UNIVERSITY   (Russian Federation)

Author keywords

A. semiconductors; C. point defects; D. electronic states (localized); D. radiation effects; E. luminescence

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC DENSITY OF STATES; PHOTOLUMINESCENCE; POINT DEFECTS; RADIATION EFFECTS; SPECTROSCOPY; STRESSES;

DEFECT FORMATION; UNIAXIAL STRESS;

SEMICONDUCTING SILICON;

EID: 0032089476     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00096-9     Document Type: Article

References (9)

1. 4 represents the isoelectronic centre with the exciton binding energy 48.0 meV. The corresponding major PL spectral lines are denoted by the letter X. In parenthesis notations from [3] are given.
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