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Volumn 38, Issue 6-8, 1998, Pages 1097-1101

Modelling and simulation of hot-carriers degradation of high voltage floating lateral NDMOS transistors

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HOT CARRIERS; SEMICONDUCTOR DEVICE MODELS;

EID: 0032084024     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00115-2     Document Type: Article
Times cited : (4)

References (3)
  • 1
    • 11544252567 scopus 로고    scopus 로고
    • Hot Carrier Reliability in Submicron LDMOS transistors
    • Washington D.C. and related references
    • R. Versari et al., "Hot Carrier Reliability in Submicron LDMOS transistors", EDM'97 Washington D.C. and related references.
    • EDM'97
    • Versari, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.