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Journal of Crystal Growth

Volumn 187, Issue 2, 1998, Pages 228-233

Molecular-beam epitaxy of MnAs in the presence of atomic hydrogen

(5) Morishita, Y a Iida, K a Tsuboi, A a Taniguchi, H a Sato, K a

a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; FERROMAGNETIC MATERIALS; HYDROGEN; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

MANGANESE ARSENIDE;

INTERFACES (MATERIALS);

EID: 0032075274 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00863-4 Document Type: Article

Times cited : (7)

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