Determination of the trap density in amorphous silicon by quasi-static capacitance-voltage measurements

Journal of the Electrochemical Society

Volumn 145, Issue 5, 1998, Pages 1786-1790

  Fahrner, W R ^a,c   Loffler S ^b,c   Chan, Y ^d   Kwong, S ^d   Man, K ^d  

^a ELECTROCHEMICAL SOCIETY   (Germany)

^b SIEMENS CORPORATE RESEARCH   (United States)

^c UNIVERSITY OF HAGEN   (Germany)

^d CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CHARGE; ENERGY GAP; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT;

POISSON'S EQUATION; TRAP DENSITY;

AMORPHOUS SILICON;

EID: 0032074835     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838558     Document Type: Article

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