Behavior of GaAs FET pulsed IV characteristics

Microwave Journal

Volumn 41, Issue 5, 1998, Pages 332-335

  Rodriguez Tellez, J ^a,b,c  

^a UNIVERSITY OF BRADFORD   (United Kingdom)

^b UNIVERSITY OF LEEDS   (United Kingdom)

^c Standard Telecommunication Laboratories Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

PULSED MEASUREMENT TECHNIQUES;

MESFET DEVICES;

EID: 0032073927     PISSN: 01926225     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. L. Selmi and B. Ricco, "Modeling Temperature Effects of the DC I-V Characteristics of GaAs MESFETs," IEEE Transactions, 1993, Edition 40, No. 2, pp. 273-277.
2. J. Rodriguez-Tellez, B.P. Stothard and M. Al-Dass, "Static-, Pulsed- and Frequency-dependent Current/Voltage Characteristics of GaAs FETs," IEEE Proceedings of Circuits, Devices and Systems, 1996, Vol. 143, No. 3, pp. 129-133.
3. T. Fernandez, Y. Newport, J.M. Zamarillo, A. Mediavilla and A. Tazon, "High-speed Automated Pulsed Current/Voltage Measurement System," 23rd Europcan Microwave Conference Proceedings, Madrid, Spain, 1993, pp. 491-496.
4. J. Rodriguez-Tellez, S. Loredo and R. W. Clarke, "Self-heating in GaAs FETs: A Problem?" Microwave Journal, September 1994, Vol. 37, No. 9, pp. 76-92.