메뉴 건너뛰기




Volumn 72, Issue 19, 1998, Pages 2385-2387

Femtosecond laser ablation of gallium arsenide investigated with time-of-flight mass spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; LASER PULSES; MATHEMATICAL MODELS; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY; TEMPERATURE; VELOCITY;

EID: 0032073754     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121364     Document Type: Article
Times cited : (50)

References (21)
  • 19
    • 0012025863 scopus 로고
    • Emission of ions during laser heating of semiconductors has been observed in a number of experiments [e.g.
    • Emission of ions during laser heating of semiconductors has been observed in a number of experiments [e.g., J. M. Liu et al., Appl. Phys. Lett. 39, 755 (1981)]. A discussion of its possible origin can be found in
    • (1981) Appl. Phys. Lett. , vol.39 , pp. 755
    • Liu, J.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.