Temperature-dependent terahertz output from semi-insulating GaAs photoconductive switches

Applied Physics Letters

Volumn 72, Issue 18, 1998, Pages 2229-2231

  Markelz, A G ^a   Heilweil, E J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIPOLE ANTENNAS; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; LASER PULSES; LIGHT ABSORPTION; MEASUREMENT ERRORS; PHONONS; PHOTOCONDUCTING MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON ON SAPPHIRE TECHNOLOGY; TEMPERATURE MEASUREMENT;

CURRENT TRANSIENT; ELECTRON MOBILITY; HERTZIAN DIPOLE ANTENNAS; PHOTOCONDUCTIVE SWITCHES;

SEMICONDUCTOR SWITCHES;

EID: 0032071530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121329     Document Type: Article

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