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Volumn 81, Issue 5, 1998, Pages 1248-1255

Cation-aided joining of surfaces of β-silicon nitride: Structural and electronic aspects

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFUSION IN SOLIDS; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; INTERFACES (MATERIALS); STOICHIOMETRY;

EID: 0032071124     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1998.tb02475.x     Document Type: Article
Times cited : (9)

References (48)
  • 1
  • 3
    • 0012586650 scopus 로고
    • NATO Advanced Study Institute, Series E: Applied Sciences, Martinus Nijhoff, Boston, MA
    • F. L. Riley (ed.), Progress in Nitrogen Ceramics, NATO Advanced Study Institute, Series E: Applied Sciences, Vol. 65. Martinus Nijhoff, Boston, MA, 1983.
    • (1983) Progress in Nitrogen Ceramics , vol.65
    • Riley, F.L.1
  • 4
    • 0004524545 scopus 로고
    • High Temperature Structural Ceramics
    • R. N. Katz, "High Temperature Structural Ceramics," Science, 208, 841-47 (1980).
    • (1980) Science , vol.208 , pp. 841-847
    • Katz, R.N.1
  • 6
    • 0001251504 scopus 로고
    • Silicon Nitride Ceramics: Composition, Fabrication Parameters, and Properties
    • J. Weiss, "Silicon Nitride Ceramics: Composition, Fabrication Parameters, and Properties," Annu. Rev. Mater. Sci., 11, 381-89 (1981).
    • (1981) Annu. Rev. Mater. Sci. , vol.11 , pp. 381-389
    • Weiss, J.1
  • 7
    • 0040114533 scopus 로고
    • Engineering Properties of Nitrides
    • Edited by S. J. Schneider. ASM International, Metals Park, OH
    • S. Hampshire, "Engineering Properties of Nitrides"; pp. 812-20 in Engineered Materials Handbook, Ceramics and Glasses, Vol. 4. Edited by S. J. Schneider. ASM International, Metals Park, OH, 1991.
    • (1991) Engineered Materials Handbook, Ceramics and Glasses , vol.4 , pp. 812-820
    • Hampshire, S.1
  • 9
    • 0039896719 scopus 로고
    • The Electronic Structure of Silicon Nitride, the Valence Band DOS and Band Gaps
    • J. P. Xanthakis, S. Papadopoulos, and P. R. Mason, "The Electronic Structure of Silicon Nitride, the Valence Band DOS and Band Gaps," J. Phys. C: Solid State Phys., 21, L555-L560 (1988).
    • (1988) J. Phys. C: Solid State Phys. , vol.21
    • Xanthakis, J.P.1    Papadopoulos, S.2    Mason, P.R.3
  • 10
    • 0001510994 scopus 로고
    • Electronic Structure of Amorphous Hydrogenated Silicon Nitride and Amorphous Hydrogenated Germanium Nitride
    • S. S. Makler, G. Martins da Rocha, and E. V. Anda, "Electronic Structure of Amorphous Hydrogenated Silicon Nitride and Amorphous Hydrogenated Germanium Nitride," Phys. Rev. B: Condens. Matter, B41, 5857-70 (1990).
    • (1990) Phys. Rev. B: Condens. Matter , vol.B41 , pp. 5857-5870
    • Makler, S.S.1    Martins Da Rocha, G.2    Anda, E.V.3
  • 11
    • 0019050196 scopus 로고
    • The Electronic Structure of Silicon Nitride
    • R. J. Sokel, "The Electronic Structure of Silicon Nitride," J. Phys. Chem. Solids, 41, 899-906 (1980).
    • (1980) J. Phys. Chem. Solids , vol.41 , pp. 899-906
    • Sokel, R.J.1
  • 12
    • 0019597526 scopus 로고
    • The Electronic Properties of Silicon Nitride
    • J. Robertson, "The Electronic Properties of Silicon Nitride," Philos. Mag. B, B44, 215-37 (1981).
    • (1981) Philos. Mag. B , vol.B44 , pp. 215-237
    • Robertson, J.1
  • 13
    • 0001069311 scopus 로고
    • Electronic Structures of β- and α-Silicon Nitride
    • S. Y. Ren and W. Y. Ching, "Electronic Structures of β- and α-Silicon Nitride," Phys. Rev. B: Condens. Matter, B23, 5454-63 (1981).
    • (1981) Phys. Rev. B: Condens. Matter , vol.B23 , pp. 5454-5463
    • Ren, S.Y.1    Ching, W.Y.2
  • 14
    • 0004644224 scopus 로고
    • 4
    • Materials Research Society Symposium Proceedings, Edited by G. Lucovsky and S. T. Pantelides. Materials Research Society, Pittsburgh, PA
    • 2 and Its Interfaces. Edited by G. Lucovsky and S. T. Pantelides. Materials Research Society, Pittsburgh, PA, 1988.
    • (1988) 2 and Its Interfaces , vol.105 , pp. 181-186
    • Xu, Y.N.1    Ching, W.Y.2
  • 16
    • 35949005389 scopus 로고
    • Electronic Structure and Optical Properties of α and β Phases of Silicon Nitride, Silicon Oxynitride, and with Comparison to Silicon Dioxide
    • Y. N. Xu and W. Y. Ching, "Electronic Structure and Optical Properties of α and β Phases of Silicon Nitride, Silicon Oxynitride, and with Comparison to Silicon Dioxide," Phys. Rev. B: Condens. Matter, B51, 17379-89 (1995).
    • (1995) Phys. Rev. B: Condens. Matter , vol.B51 , pp. 17379-17389
    • Xu, Y.N.1    Ching, W.Y.2
  • 17
    • 0025957694 scopus 로고
    • Electronic Structure of Silicon Nitride
    • J. Robertson, "Electronic Structure of Silicon Nitride," Philos. Mag. B, B63, 47-77 (1991).
    • (1991) Philos. Mag. B , vol.B63 , pp. 47-77
    • Robertson, J.1
  • 20
    • 0038477918 scopus 로고
    • Hole Conduction and Valence-Bond Structure of Silicon Nitride Films on Silicon
    • Z. A. Weinberg and R. A. Pollak, "Hole Conduction and Valence-Bond Structure of Silicon Nitride Films on Silicon," Appl. Phys. Lett., 27 [4] 254-55 (1975).
    • (1975) Appl. Phys. Lett. , vol.27 , Issue.4 , pp. 254-255
    • Weinberg, Z.A.1    Pollak, R.A.2
  • 22
    • 0029322818 scopus 로고
    • Crystal Orbital Schemes for Solids. Transition Metal Monocarbides and Mononitrides
    • L'. Benco, "Crystal Orbital Schemes for Solids. Transition Metal Monocarbides and Mononitrides," Solid State Commun., 94, 861-66 (1995).
    • (1995) Solid State Commun. , vol.94 , pp. 861-866
    • Benco, L.1
  • 24
    • 0026910780 scopus 로고
    • Electronic Structure behind the Mechanical Properties of β-sialons
    • I. Tanaka, S. Nasu, H. Adachi, Y. Miyamoto, and K. Niihara, "Electronic Structure behind the Mechanical Properties of β-sialons," Acta Metall. Mater., 40, 1995-2001 (1992).
    • (1992) Acta Metall. Mater. , vol.40 , pp. 1995-2001
    • Tanaka, I.1    Nasu, S.2    Adachi, H.3    Miyamoto, Y.4    Niihara, K.5
  • 26
  • 31
    • 0022012906 scopus 로고
    • Ruby Structures Peculiarities Derived from X-Ray Diffraction Data Localization of Chromium Atoms
    • (a)V. G. Tsirelson, M. Y. Antipin, R. G. Gerr, R. P. Ozerov, and Y. T. Struchkov, "Ruby Structures Peculiarities Derived from X-Ray Diffraction Data Localization of Chromium Atoms," Phys. Status Solidi A, A87, 425-33 (1985).
    • (1985) Phys. Status Solidi A , vol.A87 , pp. 425-433
    • Tsirelson, V.G.1    Antipin, M.Y.2    Gerr, R.G.3    Ozerov, R.P.4    Struchkov, Y.T.5
  • 33
    • 0017536236 scopus 로고
    • Crystal Structure Refinement of Al and GaN
    • (c)H. Schulz and K. H. Thiemann, "Crystal Structure Refinement of Al and GaN," Solid State Commun., 23, 815-19 (1977).
    • (1977) Solid State Commun. , vol.23 , pp. 815-819
    • Schulz, H.1    Thiemann, K.H.2
  • 35
    • 33749005863 scopus 로고
    • A Chemical and Theoretical Way to Look at Bonding on Surfaces
    • R. Hoffmann, "A Chemical and Theoretical Way to Look at Bonding on Surfaces," Rev. Mod. Phys., 60, 601-28 (1988).
    • (1988) Rev. Mod. Phys. , vol.60 , pp. 601-628
    • Hoffmann, R.1
  • 37
    • 0346927956 scopus 로고
    • An Extended Hückel Theory. I. Hydrocarbons
    • R. Hoffmann, "An Extended Hückel Theory. I. Hydrocarbons," J. Chem. Phys., 39, 1397-412 (1963).
    • (1963) J. Chem. Phys. , vol.39 , pp. 1397-1412
    • Hoffmann, R.1
  • 38
    • 33746322170 scopus 로고
    • Atomic Shielding Parameters
    • G. Burns, "Atomic Shielding Parameters," J. Chem. Phys., 41, 1521-22 (1964).
    • (1964) J. Chem. Phys. , vol.41 , pp. 1521-1522
    • Burns, G.1
  • 40
    • 33947092746 scopus 로고
    • Counterintuitive Orbital Mixing in Semiempirical and ab initio Molecular Orbital Calculations
    • J. H. Ammeter, H.-B. Bürgi, J. C. Thibeault, and R. Hoffmann, "Counterintuitive Orbital Mixing in Semiempirical and ab initio Molecular Orbital Calculations," J. Am. Chem. Soc., 100, 3686-92 (1978).
    • (1978) J. Am. Chem. Soc. , vol.100 , pp. 3686-3692
    • Ammeter, J.H.1    Bürgi, H.-B.2    Thibeault, J.C.3    Hoffmann, R.4
  • 43
    • 84990678028 scopus 로고
    • The Use of Symmetry in Reciprocal Space Integrations. Asymmetric Units and Weighting Factors for Numerical Intergration Procedures in Any Crystal Symmetry
    • R. Ramirez and M. C. Böhm, "The Use of Symmetry in Reciprocal Space Integrations. Asymmetric Units and Weighting Factors for Numerical Intergration Procedures in Any Crystal Symmetry," Int. J. Quantum Chem., 34, 571-94 (1988).
    • (1988) Int. J. Quantum Chem. , vol.34 , pp. 571-594
    • Ramirez, R.1    Böhm, M.C.2
  • 45
    • 85047675789 scopus 로고
    • Strength and Oxidation of Reaction-Sintered Silicon Nitride
    • A. G. Evans and R. W. Davidge, "Strength and Oxidation of Reaction-Sintered Silicon Nitride," J. Mater. Sci., 5, 314-25 (1970).
    • (1970) J. Mater. Sci. , vol.5 , pp. 314-325
    • Evans, A.G.1    Davidge, R.W.2
  • 46
    • 84977250329 scopus 로고
    • Oxidation Kinetics of Powdered Silicon Nitride
    • R. M. Horton, "Oxidation Kinetics of Powdered Silicon Nitride," J. Am. Ceram. Soc., 52 [3] 121-24 (1969).
    • (1969) J. Am. Ceram. Soc. , vol.52 , Issue.3 , pp. 121-124
    • Horton, R.M.1
  • 47
    • 0024478566 scopus 로고
    • Interfacial Characterization of Silicon Nitride Powders
    • L. Bergström and R. J. Pugh, "Interfacial Characterization of Silicon Nitride Powders," J. Am. Ceram. Soc., 72 [1] 103-109 (1989).
    • (1989) J. Am. Ceram. Soc. , vol.72 , Issue.1 , pp. 103-109
    • Bergström, L.1    Pugh, R.J.2
  • 48
    • 0007507455 scopus 로고    scopus 로고
    • The Theory of Metal-Ceramic Interfaces
    • M. W. Finnis, "The Theory of Metal-Ceramic Interfaces," J. Phys.: Condens. Matter, 8, 5811-36 (1996).
    • (1996) J. Phys.: Condens. Matter , vol.8 , pp. 5811-5836
    • Finnis, M.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.