Dry etching of deep Si trenches for released resonators in a Cl2 plasma

Journal of the Electrochemical Society

Volumn 145, Issue 5, 1998, Pages 1767-1771

  Weigold, J W ^a,b   Juan, W H ^a   Pang, S W ^a,b  

^a University of Michigan   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ASPECT RATIO; CHLORINE; ELECTRON CYCLOTRON RESONANCE; ELECTROPLATING; MASKS; MICROWAVES; NICKEL; PASSIVATION; PLASMA ETCHING; RESONATORS; SILICON COMPOUNDS;

SILICON HEXAFLUORIDE;

SEMICONDUCTING SILICON;

EID: 0032071105     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838555     Document Type: Article

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