GaN thin film fabrication by reaction of laser evaporated Ga and GaAs in NH 3 atmosphere

Applied Surface Science

Volumn 127-129, Issue , 1998, Pages 350-354

  Di Palma, Tonia M ^a   Teghil, Roberto ^b   Marotta, Veronica ^c   Giardini Guidoni, Anna ^a,c   Mele, Aldo ^a   He, M Q ^d   Chen, N Q ^d   Zhou, P Z ^d   Okabe, Hideo ^d  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b UNIVERSITY OF BASILICATA   (Italy)

^c CNR   (Italy)

^d HOWARD UNIVERSITY   (United States)

Author keywords

Film deposition; Gallium nitride; Laser ablation

Indexed keywords

AMMONIA; DEPOSITION; LASER ABLATION; NITRIDING; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; GAS PHASE SOLVATION; LASER EVAPORATION;

SEMICONDUCTING FILMS;

EID: 0032070526     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00654-5     Document Type: Article

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