Time response of avalanche photodiodes as a function of the internal gain

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 409, Issue 1-3, 1998, Pages 410-413

  Benlloch, J M ^a   Dokoutchaeva, V ^b   Malakhov, N ^c   Menzione, A ^d   Munar, A ^a  

^a UNIVERSITY OF VALENCIA   (Spain)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d INFN SEZIONE DI PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; LASER APPLICATIONS; LIGHT EMITTING DIODES; SEMICONDUCTING SILICON;

AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0032068915     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00114-4     Document Type: Article

References (3)

1. Z.Y. Sadygov et al., IEEE Trans. Nucl. Sci. 43(3) (1996) 1009.
2. Afanasiev et al., Nucl. Phys. B (Proc. Suppl.) 44 (1995) 402.
3. A. Hauger et al., IEEE Trans. Nucl. Sci. 0-7803-0883-2, (1993) 242.