Thin oxide interface layers in a-Si:H MIS structures

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1230-1234

  Fortunato, Elvira ^a   Malik, Alexander ^a   Martins, Rodrigo ^a  

^a UNINOVA   (Portugal)

Author keywords

a Si:H; MIS structures; Oxide interface layers

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CHARGE; ELECTRIC CURRENTS; HYDROGEN PEROXIDE; INTERFACES (MATERIALS); METAL INSULATOR BOUNDARIES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; TEMPERATURE MEASUREMENT;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); THIN OXIDE INTERFACE LAYERS;

MIS DEVICES;

EID: 0032068749     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00250-6     Document Type: Article

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