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Volumn 227-230, Issue PART 2, 1998, Pages 958-961

Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering

Author keywords

dc Magnetron sputtering; Hydrogenated amorphous silicon films; Thermal annealing

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; ANNEALING; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNETRON SPUTTERING; NUCLEATION; QUARTZ; SUBSTRATES;

EID: 0032068681     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00246-4     Document Type: Article
Times cited : (10)

References (18)
  • 2
    • 0347058055 scopus 로고
    • Thesis Université Louis Pasteur, Strasbourg France
    • T. Kretz, Thesis Université Louis Pasteur, Strasbourg France, 1993.
    • (1993)
    • Kretz, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.