Spin-dependent processes in a-Si:H Schottky barrier diodes

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1177-1181

  Lerner, C ^a   Lips, K ^b   Fuhs, W ^b  

^a PHILIPPS UNIVERSITY MARBURG   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

a Si:H; Dangling bond; Electrically detected magnetic resonance (EDMR); Schottky barrier

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CHEMICAL BONDS; ELECTRIC CURRENTS; MAGNETIC RESONANCE; QUENCHING; SEMICONDUCTOR DEVICE STRUCTURES; THERMOANALYSIS;

ELECTRICALLY DETECTED MAGNETIC RESONANCE (EDMR); NEUTRAL DANGLING BOND;

SCHOTTKY BARRIER DIODES;

EID: 0032068610     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00300-7     Document Type: Article

References (13)

1. I. Solomon, D. Biegelsen, J.C. Knights, Solid State Commun. 22 (1977) 505.
2. H. Dersch, L. Schweitzer, J. Stuke, Phys. Rev. B 28 (1983) 4678.
3. K. Lips, S. Schütte, W. Fuhs, Phil. Mag. B 65 (1992) 945.
4. M.S. Brandt, M. Stutzmann, Phys. Rev. B 43 (1991) 5184.
5. K. Lips, W. Fuhs, J. Appl. Phys. 74 (1993) 3993.
6. J.I. Pankove, D.E. Carlson, Appl. Phys. Lett. 29 (1976) 620.
7. K. Lips, Mat. Res. Soc. Symp. 377 (1995) 455.
8. K. Lips, C. Lerner, W. Fuhs, J. Non-Cryst. Solids 198-200 (1996) 267.
9. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1976.
10. E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts, Clarendon Press, Oxford, 1988.
11. M.S. Brandt, M. Stutzmann, J. Kocka, J. Non-Cryst. Solids 164-166 (1993) 693.
12. P.M. Lenahan, W.K. Schubert, Solid State Commun. 47 (1983) 423.
13. M. Block, J. Non-Cryst. Solids 164-166 (1993) 701.