SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 42, Issue 5, 1998, Pages 761-770

Non-quasistatic simultaneous HF/LF-CV measurements for rapid characterization of MOS structures

(1) Sorge, Roland a

a IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COMPUTATIONAL METHODS; ELECTRIC CHARGE; ENERGY GAP; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT;

FLATBAND ENERGY LEVEL; INVERSION CHARGE;

MOS CAPACITORS;

EID: 0032068477 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(97)00261-X Document Type: Article

Times cited : (6)

References (20)

1
- 0004277486
- John Wiley, New York
- E. H. Nicollian and J. R. Brews, MOS Physics and Technology, John Wiley, New York (1982) (1987).
- (1982) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

2
- 0004071496
- John Wiley, New York
- D. K. Schroder, Semiconductor Material and Device Characterization, John Wiley, New York (1990).
- (1990) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

3
- 0002004328
- M. Zerbst, Z. Angew. Phys. 22, 30 (1966).
- (1966) Z. Angew. Phys. , vol.22 , pp. 30
- Zerbst, M.¹

4
- 0015376107
- R. F. Pierret, IEEE Trans. Electron Devices 19, 869 (1972).
- (1972) IEEE Trans. Electron Devices , vol.19 , pp. 869
- Pierret, R.F.¹

5
- 0016569377
- R. F. Pierret and D. W. Small, IEEE Trans. Electron Devices 22, 1051 (1975).
- (1975) IEEE Trans. Electron Devices , vol.22 , pp. 1051
- Pierret, R.F.¹ Small, D.W.²

6
- 0020782965
- P. Tiwari, B. Bhaumik and J. Vasi, Solid-State Electron. 26, 695 (1983).
- (1983) Solid-State Electron. , vol.26 , pp. 695
- Tiwari, P.¹ Bhaumik, B.² Vasi, J.³

7
- 0020590049
- S. T. Lin, IEEE Trans. Electron. Devices 30, 60 (1983).
- (1983) IEEE Trans. Electron. Devices , vol.30 , pp. 60
- Lin, S.T.¹

8
- 0028277120
- R. Sorge, Solid-State Electron. 37, 217 (1994).
- (1994) Solid-State Electron. , vol.37 , pp. 217
- Sorge, R.¹

9
- 0042480554
- S. R. Hofstein, IEEE Trans. Electron Devices 14, 785 (1967).
- (1967) IEEE Trans. Electron Devices , vol.14 , pp. 785
- Hofstein, S.R.¹

10
- 0016575092
- W. Zechnall and W. M. Werner, Solid-State Electron. 18, 971 (1975).
- (1975) Solid-State Electron. , vol.18 , pp. 971
- Zechnall, W.¹ Werner, W.M.²

11
- 0017995309
- C. R. Viswanathan and T. Takino, IEEE Trans. Electron. Devices 25, 817 (1978).
- (1978) IEEE Trans. Electron. Devices , vol.25 , pp. 817
- Viswanathan, C.R.¹ Takino, T.²

12
- 0042480555
- K. E. Ehwald and B. K. Glück, Solid-State Electron. 25, 77 (1982).
- (1982) Solid-State Electron. , vol.25 , pp. 77
- Ehwald, K.E.¹ Glück, B.K.²

13
- 0029359375
- R. Sorge, Solid-State Electron. 38, 1479 (1995).
- (1995) Solid-State Electron. , vol.38 , pp. 1479
- Sorge, R.¹

14
- 0016114553
- P. U. Calzolary, S. Graffi and C. Morandi, Solid-State Electron. 17, 1001 (1974).
- (1974) Solid-State Electron. , vol.17 , pp. 1001
- Calzolary, P.U.¹ Graffi, S.² Morandi, C.³

15
- 0017947437
- P. Kuper and C. R. Grimbergen, Solid-State Electron. 21, 549 (1978).
- (1978) Solid-State Electron. , vol.21 , pp. 549
- Kuper, P.¹ Grimbergen, C.R.²

16
- 0019552625
- U. Kelberlau and R. Kassing, Solid-State Electron. 24, 321 (1981).
- (1981) Solid-State Electron. , vol.24 , pp. 321
- Kelberlau, U.¹ Kassing, R.²

17
- 33748621800
- W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).
- (1952) Phys. Rev. , vol.87 , pp. 835
- Shockley, W.¹ Read, W.T.²

18
- 0041478725
- S. Wagner and C. N. Berglund, Rev. Sci Instrum. 43, 1775 (1972).
- (1972) Rev. Sci Instrum. , vol.43 , pp. 1775
- Wagner, S.¹ Berglund, C.N.²

19
- 0023365135
- K. S. Rabbani, Solid-State Electron. 30, 607 (1987).
- (1987) Solid-State Electron. , vol.30 , pp. 607
- Rabbani, K.S.¹

20
- 0023292438
- R. B. Comizolli, J. Electrochem. Soc. 134(2), 424 (1987).
- (1987) J. Electrochem. Soc. , vol.134 , Issue.2 , pp. 424
- Comizolli, R.B.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.