A different approach to the analysis of data in life-tests of laser diodes

Microelectronics Reliability

Volumn 38, Issue 5, 1998, Pages 767-771

  Bonfiglio, A ^a   Casu, M B ^a   Magistrali, F ^b   Maini, M ^b   Salmini, G ^b   Vanzi, M ^a  

^a UNIVERSITY OF CAGLIARI   (Italy)

^b Pirelli Labs SpA   (Italy)

Author keywords

Failures; Laser diodes; Signatures

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTOR DEVICE MODELS;

LASER LIFE-TESTS;

SEMICONDUCTOR LASERS;

EID: 0032067837     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00021-3     Document Type: Article

References (5)

1. Magistrali F, Maini M, Salmini G, Vanzi M. Analysis of 980 nm SL SQW InGaAs pump laser degradations. Proc. 21st International Symposium for Testing and Failure Analysis, ISTFA 95, Santa Clara, CA, November 1995, pp. 171-176.
2. Chiorboli G. Vanzi M, Ronchini MC, Fantini F. Electrical characterization for failure analysis of DHBC InGaAsP/InP laser diodes. Proc. Third European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 92, Schwabisch-Gmund, Germany, October 1992, pp. 237-240.
3. Kymerling LC. Recombination enhanced defect reactions. Solid State Electronics 1978;21:1391-401.
4. Ueda O. Reliability and degradation of III-V optical devices. Artech House, 1996, ch. 9-12.
5. Bonfiglio A, Casu MB, Vanzi M, Magistrali F, Maini M, Salmini G. Interpretation of sudden failures in pump laser diodes. Proc. 23rd International Symposium for Testing and Failure Analysis, ISTFA 97, Santa Clara, CA, October 1997, pp. 189-194.