High-energy W ion implantation into VO2 thin film

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 141, Issue 1-4, 1998, Pages 419-424

  Jin, P ^a   Nakao, S ^a   Tanemura, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Ion implantation; Optical properties; VO2

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; ION IMPLANTATION; MORPHOLOGY; OPTICAL PROPERTIES; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS; TUNGSTEN;

THERMOCHROMISM; VANADIUM DIOXIDE;

VANADIUM COMPOUNDS;

EID: 0032067275     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00177-3     Document Type: Article

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