Energy location of light-induced ESR centers in undoped a-Si:H

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 353-357

  Umeda, T ^a,b   Yamasaki, S ^a   Isoya, J ^a,b   Matsuda, A ^c   Tanaka, K ^a,b  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

29Si hyperfine structure; Energy shift; Hydrogenated amorphous silicon; Light induced electron spin resonance

Indexed keywords

AMORPHOUS SILICON; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; PARAMAGNETIC RESONANCE;

LIGHT INDUCED SPIN RESONANCE (LESR);

SEMICONDUCTING SILICON;

EID: 0032067247     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00075-1     Document Type: Article

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