Hall effect in YbXCu4 and the role of carrier density in the YbInCu4 valence transition

Solid State Communications

Volumn 106, Issue 6, 1998, Pages 347-351

  Figueroa, E ^a   Lawrence, J M ^a   Sarrao, J L ^b,c   Fisk, Z ^b   Hundley, M F ^c   Thompson, J D ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

D. electronic band structure; D. electronic transport; D. heavy fermions

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; HALL EFFECT; HEAVY IONS; HIGH TEMPERATURE EFFECTS;

HEAVY FERMIONS; VALENCE TRANSITION; YTTERBIUM COPPER COMPOUNDS;

YTTERBIUM COMPOUNDS;

EID: 0032067101     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00042-8     Document Type: Article

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