Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 76-80

  Tang, Y S ^a   Cai, S J ^a   Jin, G L ^a   Wang, K L ^a   Soyez, H M ^b   Dunn, B S ^b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Molecular beam epitaxy; Si substrate; SiGe dot matrix

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICA; SOL-GELS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GLASS COATED SILICON SUBSTRATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032066521     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00447-7     Document Type: Article

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