The nature of the light hole potential profile in GaAs-InGaAs double quantum well structures

Solid State Communications

Volumn 107, Issue 3, 1998, Pages 119-123

  Moran, M ^a,b   Dawson, P ^a   Moore, K J ^a,b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b MANCHESTER METROPOLITAN UNIVERSITY   (United Kingdom)

Author keywords

A. quantum wells; A. semiconductors; D. electronic band structure

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONIC PROPERTIES; ENERGY GAP; LIGHT POLARIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CIRCULAR POLARIZATION; LIGHT HOLE STATE; PHOTOLUMINESCENCE EXCITATION SPECTRA;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032065729     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00163-X     Document Type: Article

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