메뉴 건너뛰기




Volumn 106, Issue 7, 1998, Pages 425-429

Ultrafast heating and cooling of electron plasmas in GaInAs/AlInAs quantum wells after intersubband excitation

Author keywords

A. quantum wells; A. semiconductors; D. electron electron interactions; D. electron phonon interactions; E. time resolved optical spectroscopies

Indexed keywords

CARRIER CONCENTRATION; COOLING; ELECTRON SCATTERING; ELECTRONS; FERMI LEVEL; PHONONS; PLASMA DENSITY; PLASMA HEATING; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPY;

EID: 0032065714     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00078-7     Document Type: Article
Times cited : (3)

References (14)
  • 4
    • 0003659819 scopus 로고
    • (Edited by J. Shah), and cited work therein. Academic Press, San Diego
    • For a review see: Pötz, W. and Kocevar, P., in Hot Carriers in Semiconductor Nanostructures (Edited by J. Shah), p. 87 and cited work therein. Academic Press, San Diego, 1992.
    • (1992) Hot Carriers in Semiconductor Nanostructures , pp. 87
    • Pötz, W.1    Kocevar, P.2
  • 7
    • 11544268547 scopus 로고    scopus 로고
    • The convolution accounts for both the bandwidth of the probe pulses and the finite slope of the low temperature absorption edge of the samples which is due to inhomogeneities, collision broadening and many body effects, e.g. the Fermi edge singularity
    • The convolution accounts for both the bandwidth of the probe pulses and the finite slope of the low temperature absorption edge of the samples which is due to inhomogeneities, collision broadening and many body effects, e.g. the Fermi edge singularity.
  • 10
    • 0000540133 scopus 로고
    • LO by using the average between the values of GaAs and InAs, see also: Usher, S., Srivastava, G.P., Phys. Rev., B50, 1994, 14179 and Grann, E.D., Tsen, K.T. and Ferry, D.K., Phys. Rev., B53, 1996, 9847.
    • (1994) Phys. Rev. , vol.B50 , pp. 14179
    • Usher, S.1    Srivastava, G.P.2
  • 11
    • 0000459514 scopus 로고    scopus 로고
    • LO by using the average between the values of GaAs and InAs, see also: Usher, S., Srivastava, G.P., Phys. Rev., B50, 1994, 14179 and Grann, E.D., Tsen, K.T. and Ferry, D.K., Phys. Rev., B53, 1996, 9847.
    • (1996) Phys. Rev. , vol.B53 , pp. 9847
    • Grann, E.D.1    Tsen, K.T.2    Ferry, D.K.3
  • 13


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.