Spatial and quantum confinement in crystalline and amorphous porous silicon

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 248-253

  Solomon, I ^a   Wehrspohn, R B ^a   Chazalviel, J N ^a   Ozanam, F ^a  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

Boron doping; Hydrogenated amorphous silicon (a Si:H) films; Photoluminescence (PL)

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; BORON; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDROGENATION; PHOTOLUMINESCENCE; POROUS SILICON; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

QUANTUM CONFINEMENT;

SEMICONDUCTING FILMS;

EID: 0032065208     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00170-7     Document Type: Article

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