Relaxation of thermally induced defects in LPCVD amorphous silicon

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 328-331

  Agarwal, P ^a   Kostana, M ^b   Agarwal, S C ^a   Pietruszko, S M ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Hydrogen content; LPCVD amorphous silicon; Metastability; Relaxation of defects

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; HYDROGEN; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING FILMS;

EID: 0032065077     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00174-4     Document Type: Article

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