Preparation of p-type poly crystalline diamond films and their applications to hole injection layers in amorphous SiC:H thin film light emitting diodes

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1156-1159

  Chirakawikul, K ^a   Sujaridchai, T ^a   Ratwises, B ^a   Kruangam, D ^a   Panyakeow, S ^a   Boonkosum, W ^b   Sugino, T ^c   Shirafuji, J ^c  

^a CHULALONGKORN UNIVERSITY   (Thailand)

^b Telephone Organization of Thailand   (Thailand)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Amorphous SiC:H; Diborane; Light emitting diode; Methanol; p Type polycrystalline diamond films

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIAMOND FILMS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM PREPARATION; LIGHT EMISSION; LIGHT EMITTING DIODES; METHANOL; SYNTHESIS (CHEMICAL); THIN FILM DEVICES;

DIBORANE; HOLE DENSITY; HOLE MOBILITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE DIAMOND FILMS;

POLYCRYSTALLINE MATERIALS;

EID: 0032065057     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00350-0     Document Type: Article

References (3)

1. B.V. Spitsyn, L.L. Bouilov, B.V. Derjaguin, J. Cryst. Growth 52 (1981) 219.
2. K. Kobashi, K. Nishimura, Y. Kawate, T. Horiuchi, Phys. Rev. B 38 (1988) 4067.
3. D. Kruangam, in: Amorphous and Microcrystalline Semiconductor Device/Optoelectronic Devices, Chap. 6, J. Kanicki (Ed.), Artech House, USA, 1991, p. 195.