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Volumn 321, Issue 1-2, 1998, Pages 111-115

Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor deposition

Author keywords

Multiple quantum wells; Si1 xGex; Ultra high vacuum electron cyclotron resonance chemical vapor deposition (UHV ECRCVD)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON CYCLOTRON RESONANCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EID: 0032064466     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00457-X     Document Type: Article
Times cited : (4)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.