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Volumn 321, Issue 1-2, 1998, Pages 111-115
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Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor deposition
a a b b c c |
Author keywords
Multiple quantum wells; Si1 xGex; Ultra high vacuum electron cyclotron resonance chemical vapor deposition (UHV ECRCVD)
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
ELECTRON CYCLOTRON RESONANCE;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
SILICON WAFERS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
ULTRAHIGH VACUUM (UHV);
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0032064466
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)00457-X Document Type: Article |
Times cited : (4)
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References (20)
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