Epitaxial growth of aluminum on silicon substrates by metalorganic molecular beam epitaxy using dimethyl-ethylamine alane

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 5 A, 1998, Pages 2602-2605

  Neo, Yoichiro ^a   Otoda, Toshihiro ^a   Sagae, Katumi ^a   Mimura, Hidenori ^a   Yokoo, Kuniyoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Aluminum; DMEAA; Epitaxial growth; Silicon; Single crystal

Indexed keywords

ALUMINUM; CRYSTALS; MOLECULAR BEAM EPITAXY; ORGANOMETALLICS; SILICON; SUBSTRATES;

EPITAXIAL GROWTH;

EID: 0032063840     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2602     Document Type: Article

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