Ion energy effects on surface chemistry and damage in a high density plasma etch process for gallium arsenide

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 5 B, 1998, Pages

  Leonhardt, D ^a   Eddy, Ch R ^a   Shamamian, V A ^a   Holm, R T ^a   Glembocki, O J ^a   Thoms, B D ^a   Katzer, D S ^a   Butler, J E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMISTRY; CHLORINE; FERMI LEVEL; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

SURFACE DAMAGE;

PLASMA ETCHING;

EID: 0032063839     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l577     Document Type: Article

References (13)