Study of the nature of light hole excitonic transitions in InGaAs/GaAs quantum well

Vacuum

Volumn 50, Issue 1-2, 1998, Pages 199-201

  Sek G ^a   Misiewicz, J ^a   Radziewicz, D ^a   Tlaczal M ^a   Panek, M ^a   Korbutowicz, R ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; LIGHT MEASUREMENT; LIGHT REFLECTION; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN;

LIGHT HOLE EXCITONIC TRANSITIONS; PHOTOREFLECTANCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032058290     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00037-2     Document Type: Article

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