Charge pumping investigations on parasitic regions in polysilicon TFT

Electronics Letters

Volumn 34, Issue 8, 1998, Pages 809-811

  Kim, Ohyun ^a   Kim, Klee Jong ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HYDROGENATION; PASSIVATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

CHARGE PUMPING MEASUREMENTS;

THIN FILM TRANSISTORS;

EID: 0032051368     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980527     Document Type: Article

References (6)

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2. HEREMANS, P., WITTERS, J., OROSENEKEN, G., and MAES, H.E.: 'Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation', IEEE Trans. Electron Devices, 1989, ED-36, (7), pp. 1318-1335
3. OUISSE, T., CRISTOLOVEANU, S., ELEWA, T., HADDARA, H., BOREL, G., and IOANNOU, D.E.: 'Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator', IEEE Trans. Electron Devices, 1991, ED-38, (6), pp. 1432-1444
4. ELEWA, T., KLEVELAND, B., CRISTOLOVEANU, S., BOUKRISS, B., and CHOVET, A.: 'Detailed analysis of edge effects in SIMOX-MOS transistors', IEEE Trans. Electron Devices, 1992, ED-39, (4), pp. 874-882
5. KOYANAGI, M., BABA, Y., HATA, K., WU, I.-W., LEWIS, A.G., FUSE, M., and BRUCE, R.: 'The charge pumping technique for grain boundary trap evaluation in polysilicon TFT's', IEEE Electron Device Lett., 1992, 13, (3), pp. 152-154
6. MITRA, U., ROSSI, B., and KHAN, B.: 'Mechanism of plasma hydrogenation of polysilicon thin film transistors'. J. Electrochem. Soc., 1991, 138, (11), pp. 3420-3424