The volume expansion of the {112̄0} planar defect in 2H-GaN/6H-SiC (0001)Si grown by MBE

Thin Solid Films

Volumn 319, Issue 1-2, 1998, Pages 153-156

  Vermaut, P ^a   Bere A ^a   Ruterana, P ^a   Nouet, G ^a   Hairie, A ^a   Paumier, E ^a  

^a CNRS   (France)

Author keywords

AlN; Atomistic calculation; Gallium nitrides; GaN; High resolution electron microscopy; MBE; Molecular beam epitaxy; SiC; Stacking fault; Volume expansion

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

ATOMISTIC CALCULATIONS; GALLIUM NITRIDE; PLANAR DEFECTS; VOLUME EXPANSION;

SEMICONDUCTOR GROWTH;

EID: 0032051218     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01112-7     Document Type: Article

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