Improved porous mixture of molybdenum nitride and tantalum oxide as a charge storage material

Journal of the Electrochemical Society

Volumn 145, Issue 4, 1998, Pages

  Deng, Charles Z ^a,b,c   Pynenburg, Rory A J ^a,b   Tsai, K C ^a,b  

^a Pinnacle Research Institute   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

^c Hutchinson Technology Incorporated   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CAPACITANCE; CONDUCTIVE FILMS; NITRIDES; OXIDES; POROUS MATERIALS;

CHARGE STORAGE MATERIALS; MOLYBDENUM NITRIDE; TANTALUM OXIDE;

BINARY MIXTURES;

EID: 0032050967     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838416     Document Type: Article

References (8)

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